Single N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and a continuous drain current of 20A. Offers a low drain-source on-resistance of 37.5mΩ at a 10V gate-source voltage. Housed in a DPAK package, this component operates within a temperature range of -55°C to 175°C and boasts a maximum power dissipation of 60W. Includes fast switching characteristics with turn-on delay time of 9.5ns and fall time of 37.1ns.
PackageDPAK
Current Rating20A
PolarityN-CHANNEL
Power60W
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Technical Specifications
Onsemi NTD20N06T4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 37.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 37.5MR |
| Element Configuration | Single |
| Fall Time | 37.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.015nF |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.88W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Radiation Hardening | No |
| Rds On Max | 46mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.91V |
| Turn-Off Delay Time | 27.1ns |
| Turn-On Delay Time | 9.5ns |
| DC Rated Voltage | 60V |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD20N06T4G Datasheet
Download the complete datasheet for Onsemi NTD20N06T4G to view detailed technical specifications.
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