Single P-Channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 15.5A. This MOSFET offers a low drain-source on-resistance of 130mΩ at a nominal gate-source voltage of -1.5V. Designed for high-power applications, it boasts a maximum power dissipation of 65W and operates across a wide temperature range from -55°C to 175°C. The component is housed in a DPAK package and is supplied on tape and reel.
PackageDPAK
Current Rating-15A
PolarityP-CHANNEL
Power65W
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Technical Specifications
Onsemi NTD20P06LT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 15.5A |
| Current Rating | -15A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 130mR |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Nominal Vgs | -1.5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 65W |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -60V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD20P06LT4G Datasheet
Download the complete datasheet for Onsemi NTD20P06LT4G to view detailed technical specifications.
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