Single P-channel logic level power MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of 25A. This MOSFET offers a low drain-source on-resistance of 51mΩ at a nominal gate-source voltage of -1.6V. Packaged in a DPAK (TO-252) surface-mount case, it supports a maximum power dissipation of 75W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 9ns and a fall time of 16ns.
PackageDPAK
PolarityP-CHANNEL
Power75W
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Technical Specifications
Onsemi NTD25P03LT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 51mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 51MR |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 2.25mm |
| Input Capacitance | 1.26nF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Nominal Vgs | -1.6V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -30V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD25P03LT4G Datasheet
Download the complete datasheet for Onsemi NTD25P03LT4G to view detailed technical specifications.
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