Single P-channel logic level power MOSFET featuring a -30V drain-source breakdown voltage and a continuous drain current of 25A. This MOSFET offers a low drain-source on-resistance of 51mΩ at a nominal gate-source voltage of -1.6V. Packaged in a DPAK (TO-252) surface-mount case, it supports a maximum power dissipation of 75W and operates within a temperature range of -55°C to 150°C. Key switching characteristics include a turn-on delay time of 9ns and a fall time of 16ns.
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| Package/Case | DPAK |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 51mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 51MR |
| Element Configuration | Single |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 15V |
| Height | 2.25mm |
| Input Capacitance | 1.26nF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Nominal Vgs | -1.6V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 75W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.6V |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | -30V |
| Width | 6.22mm |
| RoHS | Compliant |
These are design resources that include the Onsemi NTD25P03LT4G
Quarterly discontinuance notice from Onsemi for various discrete and integrated components. Includes last buy dates, ship dates, and recommended replacement parts.
Quarterly product discontinuance notice from Onsemi for various discrete and analog components, including last buy and ship dates for 2011.
Notice PD16210 detailing the transition from leaded to lead-free (RoHS compliant) versions of various ON Semiconductor components, including acquired Analog Devices products.
