NTD3055L104-1G

N-Channel MOSFET, 60V, 12A, 104mR, DPAK, Logic Level

Single N-Channel Logic Level Power MOSFET featuring 60V Drain to Source Breakdown Voltage and 12A Continuous Drain Current. This component offers a low 104mΩ Drain to Source Resistance, ideal for power switching applications. Packaged in a TO-251-3 (DPAK INSERTION MOUNT) with a maximum power dissipation of 48W, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 9.2ns turn-on delay and 40.5ns fall time, with a nominal Vgs of 2V.

PackageTO-251-3

Current Rating25A

PolarityN-CHANNEL

Power48W

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Technical Specifications

Onsemi NTD3055L104-1G technical specifications.

General

Package/Case	TO-251-3
Continuous Drain Current (ID)	12A
Current Rating	25A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	104mR
Element Configuration	Single
Fall Time	40.5ns
Gate to Source Voltage (Vgs)	15V
Height	2.38mm
Input Capacitance	440pF
Lead Free	Lead Free
Length	6.73mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	48W
Nominal Vgs	2V
Number of Elements	1
Package Quantity	75
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	48W
Radiation Hardening	No
Rds On Max	104mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Threshold Voltage	1.6V
Turn-Off Delay Time	19ns
Turn-On Delay Time	9.2ns
DC Rated Voltage	60V
Width	6.22mm