Single N-Channel Power MOSFET featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 117A. This component offers a low drain-source on-resistance of 4mΩ at a 10V gate-source voltage. Packaged in a DPAK surface mount case, it operates across a temperature range of -55°C to 175°C. Key electrical characteristics include a 2.5V threshold voltage and a 4.49nF input capacitance. This RoHS compliant device is supplied on a 2500-piece reel.
PackageDPAK
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NTD4804NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 117A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 4MR |
| Element Configuration | Single |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.089inch |
| Input Capacitance | 4.49nF |
| Lead Free | Lead Free |
| Length | 0.264inch |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.43W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 18ns |
| Width | 0.245inch |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4804NT4G Datasheet
Download the complete datasheet for Onsemi NTD4804NT4G to view detailed technical specifications.
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