The NTD4805N-1G is a single N-channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 95A. It features a drain to source resistance of 5mR and a maximum operating temperature range of -55°C to 175°C. The device is packaged in a TO-251-3 package and is compliant with RoHS regulations. It has a maximum power dissipation of 79W and a power dissipation of 2.24W.
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Onsemi NTD4805N-1G technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 95A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.865nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.24W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20.8ns |
| RoHS | Compliant |
