Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 88A continuous drain current. This surface-mount component offers a low 5mΩ drain-source on-resistance and is housed in a DPAK package. Key electrical characteristics include a 2.865nF input capacitance and switching times of 17.2ns turn-on delay and 8ns fall time. Designed for operation between -55°C and 175°C, it supports a maximum gate-source voltage of 20V and has a power dissipation of 1.41W.
PackageDPAK
PolarityN-CHANNEL
Power2.24W
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Technical Specifications
Onsemi NTD4805NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 95A |
| Drain to Source Breakdown Voltage | 30V |
| Drain-source On Resistance-Max | 5MR |
| Element Configuration | Single |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 2.865nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.41W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.24W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20.8ns |
| Turn-On Delay Time | 17.2ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4805NT4G Datasheet
Download the complete datasheet for Onsemi NTD4805NT4G to view detailed technical specifications.
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