The NTD4806N-1G is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a continuous drain current of 79A and a drain to source breakdown voltage of 30V. The device has a maximum power dissipation of 68W and a power dissipation of 2.14W. It is packaged in a TO-251-3 package and is RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power2.14W
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Technical Specifications
Onsemi NTD4806N-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 79A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.142nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.14W |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4806N-1G Datasheet
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