
N-Channel Power MOSFET, 30V Drain-Source Breakdown Voltage, 79A Continuous Drain Current, and 6mΩ Max Drain-Source On-Resistance. Features a DPAK surface mount package with a maximum power dissipation of 68W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 4.7ns fall time and 26ns turn-off delay. RoHS compliant and lead-free.
Onsemi NTD4806NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 79A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6MR |
| Element Configuration | Single |
| Fall Time | 4.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 2.142nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 68W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.14W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 13.9ns |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD4806NT4G to view detailed technical specifications.
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