The NTD4809N-1G is a single N-channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 58A. It features a low drain to source resistance of 9mR and a maximum power dissipation of 52W. The device is packaged in a TO-251-3 case and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 175°C.
PackageTO-251-3
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi NTD4809N-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.456nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25.3ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4809N-1G Datasheet
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