The NTD4809N-35G is an N-Channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current of 58A and a drain to source breakdown voltage of 30V. The device features a drain to source resistance of 9mR and a power dissipation of 2W. It is packaged in a TO-251-3 package and is lead free and RoHS compliant.
Sign in to ask questions about the Onsemi NTD4809N-35G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTD4809N-35G technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.456nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25.3ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD4809N-35G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
