The NTD4809NA-35G is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 30V and a drain to source resistance of 9mR. The device is packaged in a TO-251-3 package and is mounted through a hole. It has a maximum power dissipation of 52W and a maximum drain to source voltage of 30V.
Onsemi NTD4809NA-35G technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.456nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS | Compliant |
No datasheet is available for this part.
