
The NTD4809NAT4G is a surface mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 58A and a maximum power dissipation of 52W. The device is packaged in a DPAK package and is available in quantities of 2500. The NTD4809NAT4G is not radiation hardened and has a maximum gate to source voltage of 20V and a maximum drain to source voltage of 30V.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTD4809NAT4G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTD4809NAT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.456nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD4809NAT4G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
