The NTD4809NAT4G is a surface mount N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 58A and a maximum power dissipation of 52W. The device is packaged in a DPAK package and is available in quantities of 2500. The NTD4809NAT4G is not radiation hardened and has a maximum gate to source voltage of 20V and a maximum drain to source voltage of 30V.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Onsemi NTD4809NAT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Voltage (Vdss) | 30V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.456nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 9mR |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4809NAT4G Datasheet
Download the complete datasheet for Onsemi NTD4809NAT4G to view detailed technical specifications.
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