The NTD4809NH-35G is a single N-channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 11.5A. It has a maximum power dissipation of 52W and operates within a temperature range of -55°C to 175°C. The device is packaged in a lead-free DPAK and is RoHS compliant.
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Onsemi NTD4809NH-35G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 11.5A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.155nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22ns |
| RoHS | Compliant |
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