Single N-Channel Power MOSFET, DPAK package, featuring 30V drain-source breakdown voltage and 58A continuous drain current. Offers a low 9mΩ drain-source on-resistance. Operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 2W. Includes fast switching characteristics with a 12.3ns turn-on delay and 2.8ns fall time. Surface mountable with tape and reel packaging.
PackageDPAK
PolarityN-CHANNEL
Power2W
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Technical Specifications
Onsemi NTD4809NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 58A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 9MR |
| Element Configuration | Single |
| Fall Time | 2.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 1.456nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25.3ns |
| Turn-On Delay Time | 12.3ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4809NT4G Datasheet
Download the complete datasheet for Onsemi NTD4809NT4G to view detailed technical specifications.
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