N-Channel Power MOSFET featuring a 30V drain-source breakdown voltage and a continuous drain current of 54A. This single element MOSFET offers a low drain-source on-resistance of 10mΩ, ideal for efficient power switching. Packaged in a DPAK surface mount configuration, it operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 50W. Supplied on a 2500-piece tape and reel, this RoHS compliant component is designed for demanding applications.
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Onsemi NTD4810NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 54A |
| Current Rating | 45A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10MR |
| Element Configuration | Single |
| Fall Time | 2.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21.8ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
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