N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 40A current rating. Surface mountable in a DPAK package, this single element MOSFET offers a low 13mΩ drain-to-source resistance. Key electrical characteristics include 9A continuous drain current, 860pF input capacitance, and fast switching times with turn-on delay of 10.5ns and fall time of 19.3ns. Operating across a wide temperature range from -55°C to 175°C, it supports a maximum power dissipation of 35.3W and is supplied on a 2500-piece tape and reel.
PackageDPAK
Current Rating40A
PolarityN-CHANNEL
Power1.94W
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Technical Specifications
Onsemi NTD4813NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 40A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 19.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35.3W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.94W |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 10.1ns |
| Turn-On Delay Time | 10.5ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4813NT4G Datasheet
Download the complete datasheet for Onsemi NTD4813NT4G to view detailed technical specifications.
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