Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 35A continuous drain current. This surface mount component offers a low 15mΩ drain-to-source resistance (Rds On Max) at a nominal Vgs of 1.5V. Designed for efficient switching, it exhibits turn-on delay of 10.5ns and fall time of 21.4ns. The DPAK package supports a maximum power dissipation of 32.6W and operates across a wide temperature range of -55°C to 175°C. Packaged on a 2500-piece tape and reel, this RoHS compliant MOSFET is ideal for power management applications.
PackageDPAK
Current Rating35A
PolarityN-CHANNEL
Power1.92W
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Technical Specifications
Onsemi NTD4815NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 15mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 21.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 770pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 32.6W |
| Nominal Vgs | 1.5V |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.92W |
| Radiation Hardening | No |
| Rds On Max | 15mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 11.4ns |
| Turn-On Delay Time | 10.5ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4815NT4G Datasheet
Download the complete datasheet for Onsemi NTD4815NT4G to view detailed technical specifications.
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