The NTD4854N-35G is a high-power N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 128A and a drain to source breakdown voltage of 25V. The device is packaged in a TO-251-3 case and is mounted through a hole. It is lead free and RoHS compliant.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi NTD4854N-35G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 128A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 3.6mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 93.75W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 3.6mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 41ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4854N-35G Datasheet
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