
The NTD4855N-1G is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 66.7W and a maximum drain to source breakdown voltage of 25V. The device is packaged in a TO-251-3 package and is mounted through a hole. It is lead free and RoHS compliant.
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Onsemi NTD4855N-1G technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 98A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4.3mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 4.35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.95nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66.7W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.24W |
| Rds On Max | 4.3mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32.02ns |
| RoHS | Compliant |
