The NTD4863NAT4G is an N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a maximum power dissipation of 36.6W and a maximum drain to source breakdown voltage of 25V. The device is packaged in a DPAK case and is lead free. It has a maximum continuous drain current of 11.3A and a maximum drain to source resistance of 9.3mR. The NTD4863NAT4G is RoHS compliant and has a package quantity of 2500 units per reel.
PackageDPAK
PolarityN-CHANNEL
Power1.95W
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Technical Specifications
Onsemi NTD4863NAT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 9.3mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 16.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 990pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36.6W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.95W |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20.2ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4863NAT4G Datasheet
Download the complete datasheet for Onsemi NTD4863NAT4G to view detailed technical specifications.
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