N-Channel Power MOSFET featuring 25V Drain to Source Breakdown Voltage and 9.3mR Drain to Source Resistance. This single-element MOSFET offers a continuous drain current of 11.3A and a maximum power dissipation of 1.95W. Designed for surface mount applications, it is housed in a DPAK package with a 2.38mm height, 6.73mm length, and 6.22mm width. Operating across a temperature range of -55°C to 175°C, this RoHS compliant component is supplied on a 2500-piece tape and reel.
PackageDPAK
PolarityN-CHANNEL
Power1.95W
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Technical Specifications
Onsemi NTD4863NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 11.3A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 9.3mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 16.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 990pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.27W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.95W |
| Radiation Hardening | No |
| Rds On Max | 9.3mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20.2ns |
| Turn-On Delay Time | 11.5ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4863NT4G Datasheet
Download the complete datasheet for Onsemi NTD4863NT4G to view detailed technical specifications.
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