Onsemi
NTD4865N-1G
Power MOSFET 25V 44A 10.9 mOhm Single N Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power1.92W
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Technical Specifications
Onsemi NTD4865N-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 10.9mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 827pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33.3W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.92W |
| Rds On Max | 10.9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17.4ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4865N-1G Datasheet
Download the complete datasheet for Onsemi NTD4865N-1G to view detailed technical specifications.
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