Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 79A continuous drain current. This surface mount component offers a low 3.7mΩ drain-source on-resistance at a 10V gate-source voltage. Housed in a DPAK package, it operates across a wide temperature range of -55°C to 175°C with a maximum power dissipation of 52W. Key electrical characteristics include 3.052nF input capacitance and fast switching times with a 15.3ns turn-on delay.
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Onsemi NTD4904NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 17.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 3.052nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.6W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28.7ns |
| Turn-On Delay Time | 15.3ns |
| Width | 6.22mm |
| RoHS | Compliant |
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