N-channel Power MOSFET featuring 30V Drain-Source Breakdown Voltage and 5.5mΩ maximum Drain-Source On-Resistance. This single element MOSFET offers a continuous drain current of 14A and a maximum power dissipation of 37.5W. Designed for surface mount applications, it is housed in a DPAK package with a 6.73mm length, 6.22mm width, and 2.38mm height. Operating across a temperature range of -55°C to 175°C, this RoHS compliant component includes a turn-on delay of 13ns and a turn-off delay of 22ns.
PackageDPAK
PolarityN-CHANNEL
Power1.38W
Quick Jump:
Technical Specifications
Onsemi NTD4906NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 5.5MR |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 1.932nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37.5W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.38W |
| Radiation Hardening | No |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 13ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4906NT4G Datasheet
Download the complete datasheet for Onsemi NTD4906NT4G to view detailed technical specifications.
No datasheet is available for this part.
Product Images
