Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 8mΩ drain-source on-resistance. This surface mount component, housed in a DPAK package, offers a continuous drain current of 12.1A and a maximum power dissipation of 29.4W. It operates within a temperature range of -55°C to 175°C and includes fast switching characteristics with turn-on delay time of 11ns and turn-off delay time of 21ns. The component is RoHS compliant and lead-free.
PackageDPAK
PolarityN-CHANNEL
Power1.37W
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Technical Specifications
Onsemi NTD4909NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 12.1A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 12MR |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 1.314nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 29.4W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.37W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 11ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4909NT4G Datasheet
Download the complete datasheet for Onsemi NTD4909NT4G to view detailed technical specifications.
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