N-channel Power MOSFET featuring 30V drain-source voltage and 11.1A continuous drain current. This single-element transistor utilizes an enhancement mode channel and is housed in a TO-251AA IPAK package with 3 through-hole pins and a tab. Key specifications include a low 8mOhm drain-source on-resistance at 10V, typical gate charge of 11nC at 4.5V, and input capacitance of 1300pF at 15V. Maximum power dissipation is 1680mW, with an operating temperature range of -55°C to 175°C.
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Onsemi NTD4960N-1G technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.38(Max) |
| Package Height (mm) | 6.35(Max) |
| Seated Plane Height (mm) | 8.63(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11.1A |
| Maximum Drain Source Resistance | 8@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1300@15VpF |
| Maximum Power Dissipation | 1680mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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