N-channel enhancement mode power MOSFET, designed for through-hole mounting. Features a 30V drain-source voltage rating and a continuous drain current of 11.1A. Housed in a TO-251 (IPAK) plastic package with 3 pins and a tab, offering a maximum power dissipation of 1680mW. Exhibits a low drain-source on-resistance of 8mΩ at 10V Vgs. Operates across a wide temperature range from -55°C to 175°C.
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Onsemi NTD4960N-35G technical specifications.
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.38(Max) |
| Package Height (mm) | 6.22(Max) |
| Seated Plane Height (mm) | 9.59(Max) |
| Pin Pitch (mm) | 2.28 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251 |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11.1A |
| Maximum Drain Source Resistance | 8@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1300@15VpF |
| Maximum Power Dissipation | 1680mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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