N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 10A continuous drain current. This single-element transistor utilizes an IPAK package (TO-251AA) with 3 through-hole pins and a tab, offering a maximum power dissipation of 1640mW. Key electrical characteristics include a 2.5V gate threshold voltage and a low 9.6mOhm drain-source resistance at 10V. Operating temperature range spans from -55°C to 175°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Onsemi NTD4963N-1G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.38(Max) |
| Package Height (mm) | 6.35(Max) |
| Seated Plane Height (mm) | 8.63(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 10A |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Drain Source Resistance | 9.6@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|16.2@10VnC |
| Typical Gate Charge @ 10V | 16.2nC |
| Typical Input Capacitance @ Vds | 1035@12VpF |
| Maximum Power Dissipation | 1640mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi NTD4963N-1G Datasheet
Download the complete datasheet for Onsemi NTD4963N-1G to view detailed technical specifications.
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