The NTD4965N-1G is an N-Channel MOSFET with a breakdown voltage of 30V and a continuous drain current of 17.8A. It has a drain to source resistance of 4.7mR and a maximum power dissipation of 1.39W. The device is packaged in a TO-251-3 and is RoHS compliant. It operates over a temperature range of -55°C to 175°C.
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Onsemi NTD4965N-1G technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 17.8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 14.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.71nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.39W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 38.5W |
| Radiation Hardening | No |
| Rds On Max | 4.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18.9ns |
| Turn-On Delay Time | 12.1ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD4965N-1G to view detailed technical specifications.
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