The NTD4969N-35G is an N-channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 12.7A. It has a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device is packaged in a TO-251-3 package and is lead free. It is RoHS compliant and has a maximum power dissipation of 26.3W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTD4969N-35G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTD4969N-35G technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 12.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 837pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26.3W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 26.3W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.3ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD4969N-35G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
