The NTD4969NT4G is a single N-channel MOSFET with a drain to source breakdown voltage of 30V and a continuous drain current of 12.7A. It has a maximum operating temperature range of -55°C to 175°C and is packaged in a lead-free DPAK-3 package. The device has a maximum power dissipation of 1.38W and is RoHS compliant.
PackageDPAK
PolarityN-CHANNEL
Power26.3W
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Technical Specifications
Onsemi NTD4969NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 12.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 19mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 6.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 837pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.38W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 26.3W |
| Radiation Hardening | No |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 13.3ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4969NT4G Datasheet
Download the complete datasheet for Onsemi NTD4969NT4G to view detailed technical specifications.
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