The NTD4979NT4G is a surface mount N-channel MOSFET with a maximum operating temperature range of -55°C to 175°C. It has a continuous drain current of 41A and a drain to source breakdown voltage of 30V. The device features a maximum power dissipation of 26.3W and a maximum drain to source resistance of 9mR. It is packaged in a DPAK package and is RoHS compliant.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.56W
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Technical Specifications
Onsemi NTD4979NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 41A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance | 837pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 26.3W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.56W |
| Rds On Max | 9mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD4979NT4G Datasheet
Download the complete datasheet for Onsemi NTD4979NT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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