N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 70A continuous drain current. This single element MOSFET offers a low 10mΩ drain-source resistance (Rds On Max) and is housed in a DPAK package. Ideal for high-power applications, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 100W. Packaging is provided on a 2500-piece tape and reel.
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Onsemi NTD5406NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 70A |
| Current Rating | 70A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 29ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 2.5nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7.2ns |
| DC Rated Voltage | 40V |
| Width | 6.22mm |
| RoHS | Compliant |
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