N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 69A continuous drain current. Offers low 8.5 mOhm drain-to-source resistance and 71W maximum power dissipation. Designed for surface mount applications in a DPAK package, with a 2.85nF input capacitance and 2V threshold voltage. Operates across a wide temperature range from -55°C to 175°C.
PackageDPAK
PolarityN-CHANNEL
Power71W
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Technical Specifications
Onsemi NTD5804NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 69A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 5.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 2.85nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Radiation Hardening | No |
| Rds On Max | 8.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 26.8ns |
| Turn-On Delay Time | 11.8ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD5804NT4G Datasheet
Download the complete datasheet for Onsemi NTD5804NT4G to view detailed technical specifications.
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