The NTD5805NT4G is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 51A and a drain to source breakdown voltage of 40V. The device is packaged in a DPAK package and is lead free. The MOSFET has a maximum power dissipation of 47W and is RoHS compliant.
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Onsemi NTD5805NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 51A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 7.6mR |
| Element Configuration | Single |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.725nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Radiation Hardening | No |
| Rds On Max | 9.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 22.9ns |
| Turn-On Delay Time | 10.2ns |
| RoHS | Compliant |
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