N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 23A continuous drain current. This single MOSFET offers a low 31mΩ drain-source resistance (Rds On Max) and is housed in a DPAK surface mount package. Key electrical characteristics include 603pF input capacitance, 11.2ns turn-on delay, and 2ns fall time. Operating temperature range spans -55°C to 175°C with a maximum power dissipation of 33W.
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Onsemi NTD5807NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 31mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 603pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 15.6ns |
| Turn-On Delay Time | 11.2ns |
| Width | 6.22mm |
| RoHS | Compliant |
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