NTD5862N

This single N-channel power MOSFET is rated for 60 V drain-to-source voltage and 98 A continuous drain current at 25°C case temperature. It provides up to 5.7 mΩ on-resistance at 10 V gate drive, 115 W power dissipation, and 205 mJ single-pulse avalanche energy. The device operates from -55°C to 175°C junction temperature and uses a body diode with 1.2 V maximum forward drop at 25°C. Typical dynamic parameters include 82 nC total gate charge, 6000 pF maximum input capacitance, 18 ns turn-on delay, and 60 ns fall time. The datasheet identifies the device family as Pb-free, halogen-free, and RoHS compliant.