Single N-Channel Power MOSFET featuring 60V drain-to-source breakdown voltage and 98A continuous drain current. Offers a low 5.7mΩ maximum drain-to-source resistance. Packaged in a DPAK insertion mount with dimensions of 6.73mm length, 6.22mm width, and 2.38mm height. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 115W. This RoHS compliant component includes fast switching characteristics with turn-on delay of 18ns and fall time of 60ns.
PackageDPAK
PolarityN-CHANNEL
Power115W
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Technical Specifications
Onsemi NTD5862N-1G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 98A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 4.4mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 115W |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 115W |
| Radiation Hardening | No |
| Rds On Max | 5.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 18ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD5862N-1G Datasheet
Download the complete datasheet for Onsemi NTD5862N-1G to view detailed technical specifications.
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