N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 38A continuous drain current. Offers a low 18mΩ maximum drain-source on-resistance. Packaged in a DPAK for insertion mounting, this single-element transistor operates from -55°C to 150°C with a maximum power dissipation of 71W. Includes fast switching characteristics with a 10ns turn-on delay and 3.5ns fall time.
PackageDPAK
PolarityN-CHANNEL
Power52W
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Technical Specifications
Onsemi NTD5865N-1G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 18MR |
| Element Configuration | Single |
| Fall Time | 3.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 1.261nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 18mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD5865N-1G Datasheet
Download the complete datasheet for Onsemi NTD5865N-1G to view detailed technical specifications.
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