Single N-Channel Logic Level Power MOSFET featuring 60V drain-source breakdown voltage and 46A continuous drain current. This component offers a low 16mΩ drain-source on-resistance at Vgs=10V. Packaged in a TO-251-3 (DPAK INSERTION MOUNT) with dimensions of 6.73mm length, 2.38mm width, and 7.62mm height, it supports a maximum power dissipation of 71W. Operating temperature range is -55°C to 150°C, with lead-free and RoHS compliance.
PackageTO-251-3
PolarityN-CHANNEL
Power52W
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Technical Specifications
Onsemi NTD5865NL-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 46A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 16MR |
| Element Configuration | Single |
| Fall Time | 4.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 7.62mm |
| Input Capacitance | 1.4nF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 52W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 8.4ns |
| Width | 2.38mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD5865NL-1G Datasheet
Download the complete datasheet for Onsemi NTD5865NL-1G to view detailed technical specifications.
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