The NTD60N02R-1G is an N-Channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 58W and a maximum drain to source breakdown voltage of 25V. The device is packaged in a TO-251-3 case and is designed for through hole mounting. It is lead free and RoHS compliant.
PackageTO-251-3
Current Rating62A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTD60N02R-1G technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 62A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 8.4mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.33nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 58W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.87W |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 19ns |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD60N02R-1G Datasheet
Download the complete datasheet for Onsemi NTD60N02R-1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.