N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 17A continuous drain current. This single-element transistor is housed in a TO-251AA IPAK package with through-hole mounting and a 3-pin configuration. Key specifications include a maximum drain-source on-resistance of 81 mOhm at 10V, typical gate charge of 20 nC, and typical input capacitance of 620 pF at 25V. Maximum power dissipation is 71W, with an operating temperature range of -55°C to 175°C.
PackageIPAK
MountingThrough Hole
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Technical Specifications
Onsemi NTD6416AN-1G technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-251 |
| Package/Case | IPAK |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 6.73(Max) |
| Package Width (mm) | 2.38(Max) |
| Package Height (mm) | 6.35(Max) |
| Seated Plane Height (mm) | 8.63(Max) |
| Pin Pitch (mm) | 2.29 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-251AA |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 100V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 17A |
| Maximum Drain Source Resistance | 81@10VmOhm |
| Typical Gate Charge @ Vgs | 20@10VnC |
| Typical Gate Charge @ 10V | 20nC |
| Typical Input Capacitance @ Vds | 620@25VpF |
| Maximum Power Dissipation | 71000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi NTD6416AN-1G Datasheet
Download the complete datasheet for Onsemi NTD6416AN-1G to view detailed technical specifications.
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