N-channel Power MOSFET in a DPAK surface-mount package. Features 100V drain-to-source breakdown voltage and 12A continuous drain current. Offers a low Rds(on) of 118mR at 10Vgs. Operates from -55°C to 175°C with a maximum power dissipation of 56.6W. Includes 10.5ns turn-on delay and 26ns turn-off delay. Packaged on a 2500-piece tape and reel.
Onsemi NTD6600NT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 12A |
| Current Rating | 12A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 118mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 56.6W |
| Radiation Hardening | No |
| Rds On Max | 146mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 10.5ns |
| DC Rated Voltage | 100V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD6600NT4G to view detailed technical specifications.
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