N-Channel Power MOSFET featuring 25V drain-source breakdown voltage and 70A current rating. This surface mount device offers a low 5.6mΩ drain-source on-resistance at a 10V gate-source voltage. Operating from -55°C to 175°C, it boasts a maximum power dissipation of 62.5W and is packaged in a DPAK for tape and reel distribution. Key electrical characteristics include a 1.5V threshold voltage and fast switching times with a 1.3ns fall time.
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Onsemi NTD70N03RT4G technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 32A |
| Current Rating | 70A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 5.6MR |
| Fall Time | 1.3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.333nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.87W |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 18.4ns |
| DC Rated Voltage | 25V |
| RoHS | Compliant |
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