The NTDV20P06LT4G is a P-channel MOSFET with a maximum drain to source voltage of 60V and a continuous drain current of 15.5A. It features a drain to source resistance of 130mR and a maximum power dissipation of 65W. The device is packaged in a DPAK package and is lead free. It operates over a temperature range of -55°C to 175°C and is RoHS compliant.
PackageDPAK
PolarityP-CHANNEL
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Technical Specifications
Onsemi NTDV20P06LT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 15.5A |
| Drain to Source Resistance | 130mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 150MR |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 65W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTDV20P06LT4G Datasheet
Download the complete datasheet for Onsemi NTDV20P06LT4G to view detailed technical specifications.
No datasheet is available for this part.
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