Single P-channel JFET with -20V drain-source breakdown voltage and 760mA continuous drain current. Features 360mΩ maximum drain-source on-resistance, 156pF input capacitance, and 8.2ns fall time. Operates across a -55°C to 150°C temperature range with 313mW maximum power dissipation. Packaged in SC-89, 3-lead, tape and reel for 3000 units.
PackageSC
Current Rating-760mA
PolarityP-CHANNEL
Power313mW
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Technical Specifications
Onsemi NTE4151PT1G technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 760mA |
| Current Rating | -760mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 490mR |
| Drain-source On Resistance-Max | 260mR |
| Element Configuration | Single |
| Fall Time | 8.2ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.8mm |
| Input Capacitance | 156pF |
| Lead Free | Lead Free |
| Length | 0.066inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 313mW |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Polarization | P |
| Power Dissipation | 313mW |
| Radiation Hardening | No |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | -20V |
| Width | 0.95mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTE4151PT1G Datasheet
Download the complete datasheet for Onsemi NTE4151PT1G to view detailed technical specifications.
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