Single N-Channel JFET, 20V Drain-Source Breakdown Voltage, 915mA Continuous Drain Current, and 230mΩ Drain-Source On-Resistance. Features include a 3.7ns Turn-On Delay Time, 4.4ns Fall Time, and 25ns Turn-Off Delay Time. Operating temperature range from -55°C to 150°C with 300mW Max Power Dissipation. Packaged in an SC-89, 3-lead, tape and reel configuration.
PackageSC
Current Rating915mA
PolarityN-CHANNEL
Power300mW
Quick Jump:
Technical Specifications
Onsemi NTE4153NT1G technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
915mA
Current Rating
915mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
230MR
Element Configuration
Single
Fall Time
4.4ns
Gate to Source Voltage (Vgs)
6V
Height
0.031inch
Input Capacitance
110pF
Lead Free
Lead Free
Length
0.066inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Nominal Vgs
760mV
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
230mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
760mV
Turn-Off Delay Time
25ns
Turn-On Delay Time
3.7ns
DC Rated Voltage
20V
Width
0.037inch
Compliance
RoHS
Compliant
Datasheet
Onsemi NTE4153NT1G Datasheet
Download the complete datasheet for Onsemi NTE4153NT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
