The NTF2955PT1G is a P-channel junction field-effect transistor with a drain to source breakdown voltage of -60V and a continuous drain current of 1.7A. It features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. The device is packaged in a lead-free SOT-223 package and is mounted on the surface. It is RoHS compliant and has a maximum power dissipation of 1W.
PackageSOT-223
MountingSurface Mount
PolarityP-CHANNEL
Power2.3W
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Technical Specifications
Onsemi NTF2955PT1G technical specifications.
General
| Package/Case | SOT-223 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 185mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 492pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.3W |
| Rds On Max | 185mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTF2955PT1G Datasheet
Download the complete datasheet for Onsemi NTF2955PT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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