Single P-Channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 2.6A. Offers a low drain-source on-resistance of 145mΩ (max) and a threshold voltage of -4V. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 1W. Packaged in a SOT-223-4 (TO-261) surface-mount case, supplied on a 1000-piece tape and reel.
PackageSOT-223-4
Current Rating-2.6A
PolarityP-CHANNEL
Power2.3W
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Technical Specifications
Onsemi NTF2955T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 2.6A |
| Current Rating | -2.6A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 145mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 145MR |
| Element Configuration | Single |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.57mm |
| Input Capacitance | 492pF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.3W |
| Radiation Hardening | No |
| Rds On Max | 185mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | -60V |
| Width | 3.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTF2955T1G Datasheet
Download the complete datasheet for Onsemi NTF2955T1G to view detailed technical specifications.
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